Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
DIODE SCHOTTKY 40V 100MA ESC
Voltage - DC Ranvèse (Vr) (Max) :
40V
Kouran - Mwayèn Rèktifye (Io) :
100mA
Voltage - Forward (Vf) (Max) @ Si :
600mV @ 50mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
5µA @ 10V
Kapasite @ Vr, F :
25pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SC-79, SOD-523
Pake Aparèy Founisè :
ESC
Operating Tanperati - Junction :
125°C (Max)