Nimewo Pati :
SE30AFGHM3/6A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 3A DO221AC
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 3A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.5µs
Kouran - Fèy Reverse @ Vr :
10µA @ 400V
Kapasite @ Vr, F :
19pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-221AC, SMA Flat Leads
Pake Aparèy Founisè :
DO-221AC (SlimSMA)
Operating Tanperati - Junction :
-55°C ~ 175°C