Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. Memwa
  5. TC58BYG0S3HBAI6

Toshiba Memory America, Inc. - TC58BYG0S3HBAI6

KEY Part #: K940865

TC58BYG0S3HBAI6 Pricing (USD) [32393PC Stock]

  • 1 pcs$0.92400
  • 10 pcs$0.83202
  • 25 pcs$0.81881
  • 50 pcs$0.81655
  • 100 pcs$0.72963
  • 250 pcs$0.70592
Nimewo Pati:
TC58BYG0S3HBAI6
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
IC FLASH 1G PARALLEL 67VFBGA. NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - Videyo Processing, PMIC - Jesyon tèmik, PMIC - Chofè lazè, Akizisyon Done - Analog pou Digital Convertisseurs, Entèfas - Contrôleur, Revèy / Distribisyon - Revèy Tan Reyèl, Memwa - regulateur and Entèfas - Expanders I / O ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58BYG0S3HBAI6 electronic components. TC58BYG0S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TC58BYG0S3HBAI6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58BYG0S3HBAI6 Atribi pwodwi yo

Nimewo Pati : TC58BYG0S3HBAI6
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : IC FLASH 1G PARALLEL 67VFBGA
Seri : Benand™
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 1Gb (128M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : 25ns
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 67-VFBGA
Pake Aparèy Founisè : 67-VFBGA (6.5x8)

Dènye nouvèl

Toshiba Memory THGAF Managed NAND Flash Memories
Toshiba Memory THGAM e-MMC™ NAND Flash Memory
Toshiba Memory FlashAir™ W-04 Wireless SD Cards
Ou ka enterese tou
  • NDS73PT9-16IT

    Insignis Technology Corporation

    IC SDRAM 128MBIT 166MHZ 86TSOP.

  • IS25LQ032B-JKLE

    ISSI, Integrated Silicon Solution Inc

    IC FLASH 32M SPI 104MHZ 8WSON. NOR Flash 32Mb QSPI, WSON, RoHS

  • 25AA1024-I/MF

    Microchip Technology

    IC EEPROM 1M SPI 20MHZ 8DFN. EEPROM 128kx8 - 1.8V

  • 25LC1024-I/MF

    Microchip Technology

    IC EEPROM 1M SPI 20MHZ 8DFN. EEPROM 128K x 8 - 2.5-5.5V

  • FM24CL64B-DGTR

    Cypress Semiconductor Corp

    IC FRAM 64K I2C 1MHZ 8TDFN. F-RAM IIC FRAM 64K 3V

  • CY62256NLL-70PXC

    Alliance Memory, Inc.

    256M SRAM 28 DIP. SRAM 256K 32K x 8 4.5-5.5V 28pin 600mil DIP Commercial (0 70 C) Low Power Asynch

Pati cho