ON Semiconductor - FDD8580

KEY Part #: K6410009

[85PC Stock]


    Nimewo Pati:
    FDD8580
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 20V 35A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDD8580 electronic components. FDD8580 can be shipped within 24 hours after order. If you have any demands for FDD8580, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDD8580 Atribi pwodwi yo

    Nimewo Pati : FDD8580
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 20V 35A DPAK
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 9 mOhm @ 35A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1445pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 49.5W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-PAK (TO-252AA)
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63