Toshiba Semiconductor and Storage - RN1113ACT(TPL3)

KEY Part #: K6526879

[3017PC Stock]


    Nimewo Pati:
    RN1113ACT(TPL3)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    TRANS PREBIAS NPN 0.1W CST3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage RN1113ACT(TPL3) electronic components. RN1113ACT(TPL3) can be shipped within 24 hours after order. If you have any demands for RN1113ACT(TPL3), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1113ACT(TPL3) Atribi pwodwi yo

    Nimewo Pati : RN1113ACT(TPL3)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : TRANS PREBIAS NPN 0.1W CST3
    Seri : -
    Estati Pati : Active
    Kalite tranzistò : NPN - Pre-Biased
    Kouran - Pèseptè (Ic) (Max) : 80mA
    Voltage - Pèseptè ki emèt deba (Max) : 50V
    Rezistans - Sèvi (R1) : 47 kOhms
    Rezistans - Sèvi ak emeteur (R2) : -
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
    Vce saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
    Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
    Frekans - Tranzisyon : -
    Pouvwa - Max : 100mW
    Mounting Kalite : Surface Mount
    Pake / Ka : SC-101, SOT-883
    Pake Aparèy Founisè : CST3

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