Vishay Semiconductor Diodes Division - SE30PAGHM3/I

KEY Part #: K6428852

SE30PAGHM3/I Pricing (USD) [795249PC Stock]

  • 1 pcs$0.04651
  • 14,000 pcs$0.04215

Nimewo Pati:
SE30PAGHM3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 3A DO221BC. Rectifiers 3A, 400V, ESD PROTECTION, SMPA
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SE30PAGHM3/I electronic components. SE30PAGHM3/I can be shipped within 24 hours after order. If you have any demands for SE30PAGHM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE30PAGHM3/I Atribi pwodwi yo

Nimewo Pati : SE30PAGHM3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 3A DO221BC
Seri : eSMP®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.16V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.3µs
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : 13pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè : DO-221BC (SMPA)
Operating Tanperati - Junction : -55°C ~ 175°C

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