Global Power Technologies Group - GHIS060A060S-A1

KEY Part #: K6532672

GHIS060A060S-A1 Pricing (USD) [2499PC Stock]

  • 1 pcs$17.33669
  • 10 pcs$16.03667
  • 25 pcs$14.73628
  • 100 pcs$13.69598
  • 250 pcs$12.56911

Nimewo Pati:
GHIS060A060S-A1
Manifakti:
Global Power Technologies Group
Detaye deskripsyon:
IGBT BOOST CHOP 600V 120A SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Global Power Technologies Group GHIS060A060S-A1 electronic components. GHIS060A060S-A1 can be shipped within 24 hours after order. If you have any demands for GHIS060A060S-A1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GHIS060A060S-A1 Atribi pwodwi yo

Nimewo Pati : GHIS060A060S-A1
Manifakti : Global Power Technologies Group
Deskripsyon : IGBT BOOST CHOP 600V 120A SOT227
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 120A
Pouvwa - Max : 297W
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 60A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 3.3nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227

Ou ka enterese tou
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.