Nimewo Pati :
NGTD8R65F2WP
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 650V DIE
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
-
Voltage - Forward (Vf) (Max) @ Si :
2.8V @ 30A
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 650V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die
Operating Tanperati - Junction :
175°C (Max)