Nimewo Pati :
2SA965-Y,F(J
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS PNP 800MA 120V TO226-3
Kouran - Pèseptè (Ic) (Max) :
800mA
Voltage - Pèseptè ki emèt deba (Max) :
120V
Vce saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Kouran - Cutoff Pèseptè (Max) :
100nA (ICBO)
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
80 @ 100mA, 5V
Frekans - Tranzisyon :
120MHz
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-226-3, TO-92-3 Long Body
Pake Aparèy Founisè :
LSTM