Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 800V 12A DO214AB
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
12A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 12A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 800V
Kapasite @ Vr, F :
78pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AB, SMC
Pake Aparèy Founisè :
DO-214AB (SMC)
Operating Tanperati - Junction :
-55°C ~ 150°C