[1049PC Stock]
- Nimewo Pati:
- DGD2103AS8-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- IC GATE DRVR HALF-BRIDGE 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - Anplifikatè - Instrumentation, OP Amps, A, PMIC - PFC (Koreksyon faktè pouvwa), Lineyè - Anplifikatè - Objektif Espesyal, Lineyè - Comparators, Memwa - konfigirasyon bal fen pou FPGAs, Entèfas - Entèfas sensor ak detektè, PMIC - regilatè Voltage - DC DC oblije chanje regu and Done akizisyon - potansyomè dijital ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DGD2103AS8-13 electronic components. DGD2103AS8-13 can be shipped within 24 hours after order. If you have any demands for DGD2103AS8-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DGD2103AS8-13 Atribi pwodwi yo
Nimewo Pati :
DGD2103AS8-13
Manifakti :
Diodes Incorporated
Deskripsyon :
IC GATE DRVR HALF-BRIDGE 8SO
Seri :
-
Estati Pati :
Obsolete
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kantite Chofè yo :
2
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2.5V
Kouran - Peak Sòti (Sous, Lavabo) :
290mA, 600mA
Kalite Antre :
Inverting, Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
100ns, 50ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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