NSB8MT-E3/81 Pricing (USD) [143207PC Stock]
- 1 pcs$0.25828
- 800 pcs$0.24191
- 1,600 pcs$0.19098
- 2,400 pcs$0.17825
- 5,600 pcs$0.16976
- Nimewo Pati:
- NSB8MT-E3/81
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division NSB8MT-E3/81 electronic components. NSB8MT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8MT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8MT-E3/81 Atribi pwodwi yo
Nimewo Pati :
NSB8MT-E3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1KV 8A TO263AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 8A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 1000V
Kapasite @ Vr, F :
55pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
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NSB8MT-E3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM
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