Vishay Semiconductor Diodes Division - VS-HFA08PB120-N3

KEY Part #: K6434205

VS-HFA08PB120-N3 Pricing (USD) [21267PC Stock]

  • 1 pcs$1.93788
  • 500 pcs$1.78715

Nimewo Pati:
VS-HFA08PB120-N3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.2KV 8A TO247AC. Rectifiers 8A 1200V Ultrafast 28ns HEXFRED
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08PB120-N3 electronic components. VS-HFA08PB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08PB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08PB120-N3 Atribi pwodwi yo

Nimewo Pati : VS-HFA08PB120-N3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 8A TO247AC
Seri : HEXFRED®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 3.3V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 95ns
Kouran - Fèy Reverse @ Vr : 10µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-247-2
Pake Aparèy Founisè : TO-247AC Modified
Operating Tanperati - Junction : -55°C ~ 150°C

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