Nimewo Pati :
ISL89411IBZ
Manifakti :
Renesas Electronics America Inc.
Deskripsyon :
IC DRVR MOSFET DUAL-CH 8-SOIC
Kondwi konte genyen :
Low-Side
Kalite Chèn :
Independent
Kalite Gate :
N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
4.5V ~ 18V
Vòltaj lojik - VIL, VIH :
0.8V, 2.4V
Kouran - Peak Sòti (Sous, Lavabo) :
2A, 2A
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
7.5ns, 10ns
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC