STMicroelectronics - STD96N3LLH6

KEY Part #: K6420915

STD96N3LLH6 Pricing (USD) [291706PC Stock]

  • 1 pcs$0.12743
  • 2,500 pcs$0.12680

Nimewo Pati:
STD96N3LLH6
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 30V 80A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD96N3LLH6 Atribi pwodwi yo

Nimewo Pati : STD96N3LLH6
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 30V 80A DPAK
Seri : DeepGATE™, STripFET™ VI
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5.5V, 10V
RD sou (Max) @ Id, Vgs : 4.2 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 70W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63