Vishay Semiconductor Diodes Division - ES1B-M3/5AT

KEY Part #: K6433326

ES1B-M3/5AT Pricing (USD) [1057336PC Stock]

  • 1 pcs$0.03691
  • 22,500 pcs$0.03673

Nimewo Pati:
ES1B-M3/5AT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A,100V,15NS,UF Rect, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ES1B-M3/5AT electronic components. ES1B-M3/5AT can be shipped within 24 hours after order. If you have any demands for ES1B-M3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1B-M3/5AT Atribi pwodwi yo

Nimewo Pati : ES1B-M3/5AT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 1A DO214AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 920mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 10pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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