Infineon Technologies - BAW156E6327HTSA1

KEY Part #: K6479635

BAW156E6327HTSA1 Pricing (USD) [2098304PC Stock]

  • 1 pcs$0.01763
  • 3,000 pcs$0.01710
  • 6,000 pcs$0.01487
  • 15,000 pcs$0.01264
  • 30,000 pcs$0.01189
  • 75,000 pcs$0.01115
  • 150,000 pcs$0.00991

Nimewo Pati:
BAW156E6327HTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - JFETs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW156E6327HTSA1 Atribi pwodwi yo

Nimewo Pati : BAW156E6327HTSA1
Manifakti : Infineon Technologies
Deskripsyon : DIODE ARRAY GP 80V 200MA SOT23
Seri : -
Estati Pati : Last Time Buy
Konfigirasyon dyòd : 1 Pair Common Anode
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 200mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 5nA @ 75V
Operating Tanperati - Junction : 150°C (Max)
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3

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