Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 100A TO218
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
100A
Voltage - Forward (Vf) (Max) @ Si :
1.6V @ 100A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
100ns
Kouran - Fèy Reverse @ Vr :
250µA @ 600V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-218
Operating Tanperati - Junction :
-65°C ~ 175°C