Infineon Technologies - DD1200S17H4B2BOSA2

KEY Part #: K6472753

DD1200S17H4B2BOSA2 Pricing (USD) [97PC Stock]

  • 1 pcs$365.73535

Nimewo Pati:
DD1200S17H4B2BOSA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE MODULE 1200V 1200A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - Bridge rèktifikateur and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies DD1200S17H4B2BOSA2 electronic components. DD1200S17H4B2BOSA2 can be shipped within 24 hours after order. If you have any demands for DD1200S17H4B2BOSA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DD1200S17H4B2BOSA2 Atribi pwodwi yo

Nimewo Pati : DD1200S17H4B2BOSA2
Manifakti : Infineon Technologies
Deskripsyon : DIODE MODULE 1200V 1200A
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 2 Independent
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1700V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : -
Voltage - Forward (Vf) (Max) @ Si : 2.1V @ 1200A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1250A @ 900V
Operating Tanperati - Junction : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : AG-IHMB130-1

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