Nimewo Pati :
GA01PNS80-220
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
RF DIODE PIN 8000V
Kalite dyòd :
PIN - Single
Voltage - Peak Ranvèse (Max) :
8000V
Kapasite @ Vr, F :
4pF @ 1000V, 1MHz
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 175°C (TJ)