ON Semiconductor - 2SK3666-3-TB-E

KEY Part #: K6521306

2SK3666-3-TB-E Pricing (USD) [972762PC Stock]

  • 1 pcs$0.03821
  • 3,000 pcs$0.03802

Nimewo Pati:
2SK3666-3-TB-E
Manifakti:
ON Semiconductor
Detaye deskripsyon:
JFET N-CH 10MA 200MW 3CP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor 2SK3666-3-TB-E electronic components. 2SK3666-3-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-3-TB-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK3666-3-TB-E Atribi pwodwi yo

Nimewo Pati : 2SK3666-3-TB-E
Manifakti : ON Semiconductor
Deskripsyon : JFET N-CH 10MA 200MW 3CP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Vòltaj - Dekonpozisyon (V (BR) GSS) : -
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V
Kouran Drenaj (Id) - Max : 10mA
Voltage - Cutoff (VGS koupe) @ Id : 180mV @ 1µA
Antre kapasite (Ciss) (Max) @ Vds : 4pF @ 10V
Rezistans - RDS (Sou) : 200 Ohms
Pouvwa - Max : 200mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : 3-CP

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