Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 200V 30A TO247
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
24ns
Kouran - Fèy Reverse @ Vr :
250µA @ 200V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 [B]
Operating Tanperati - Junction :
-55°C ~ 175°C