Infineon Technologies - IGB20N60H3ATMA1

KEY Part #: K6422464

IGB20N60H3ATMA1 Pricing (USD) [77527PC Stock]

  • 1 pcs$0.50435

Nimewo Pati:
IGB20N60H3ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 40A 170W TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGB20N60H3ATMA1 electronic components. IGB20N60H3ATMA1 can be shipped within 24 hours after order. If you have any demands for IGB20N60H3ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGB20N60H3ATMA1 Atribi pwodwi yo

Nimewo Pati : IGB20N60H3ATMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 40A 170W TO263-3
Seri : TrenchStop®
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 40A
Kouran - Pèseptè batman (Icm) : 80A
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 20A
Pouvwa - Max : 170W
Oblije chanje enèji : 690µJ
Kalite Antre : Standard
Gate chaje : 120nC
Td (on / off) @ 25 ° C : 16ns/194ns
Kondisyon egzamen an : 400V, 20A, 14.6 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D²PAK (TO-263AB)