Vishay Semiconductor Diodes Division - BAS85-GS18

KEY Part #: K6458501

BAS85-GS18 Pricing (USD) [1703485PC Stock]

  • 1 pcs$0.02171
  • 10,000 pcs$0.01993
  • 30,000 pcs$0.01869
  • 50,000 pcs$0.01661

Nimewo Pati:
BAS85-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 30V 200MA SOD80. Schottky Diodes & Rectifiers 30 Volt 200mA 600 mA IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAS85-GS18 electronic components. BAS85-GS18 can be shipped within 24 hours after order. If you have any demands for BAS85-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS85-GS18 Atribi pwodwi yo

Nimewo Pati : BAS85-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 30V 200MA SOD80
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 800mV @ 100mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 5ns
Kouran - Fèy Reverse @ Vr : 2µA @ 25V
Kapasite @ Vr, F : 10pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AC, MINI-MELF, SOD-80
Pake Aparèy Founisè : SOD-80 MiniMELF
Operating Tanperati - Junction : 125°C (Max)

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