Vishay Semiconductor Diodes Division - BYM11-1000HE3_A/I

KEY Part #: K6439265

BYM11-1000HE3_A/I Pricing (USD) [777077PC Stock]

  • 1 pcs$0.04760

Nimewo Pati:
BYM11-1000HE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1A,1000V,500NS GL41 AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYM11-1000HE3_A/I electronic components. BYM11-1000HE3_A/I can be shipped within 24 hours after order. If you have any demands for BYM11-1000HE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM11-1000HE3_A/I Atribi pwodwi yo

Nimewo Pati : BYM11-1000HE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 1A DO213AB
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 500ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AB, MELF (Glass)
Pake Aparèy Founisè : DO-213AB
Operating Tanperati - Junction : -65°C ~ 175°C

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