Nimewo Pati :
RN1902FE,LF(CT
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS 2NPN PREBIAS 0.1W ES6
Kalite tranzistò :
2 NPN - Pre-Biased (Dual)
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
10 kOhms
Rezistans - Sèvi ak emeteur (R2) :
1 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
100nA (ICBO)
Frekans - Tranzisyon :
250MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6