Nimewo Pati :
IDH08G120C5XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 1200V 8A TO220-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
8A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.95V @ 8A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
40µA @ 1200V
Kapasite @ Vr, F :
365pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-2-1
Operating Tanperati - Junction :
-55°C ~ 175°C