GeneSiC Semiconductor - MBR120200CT

KEY Part #: K6468696

MBR120200CT Pricing (USD) [1424PC Stock]

  • 1 pcs$30.41954
  • 25 pcs$22.79770

Nimewo Pati:
MBR120200CT
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 200V 60A 2 TOWER. Schottky Diodes & Rectifiers 200V 120A Forward
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor MBR120200CT electronic components. MBR120200CT can be shipped within 24 hours after order. If you have any demands for MBR120200CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR120200CT Atribi pwodwi yo

Nimewo Pati : MBR120200CT
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 200V 60A 2 TOWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 60A
Voltage - Forward (Vf) (Max) @ Si : 920mV @ 60A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1mA @ 200V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Twin Tower
Pake Aparèy Founisè : Twin Tower
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