Vishay Semiconductor Diodes Division - BZT52B8V2-G3-18

KEY Part #: K6499911

BZT52B8V2-G3-18 Pricing (USD) [1954878PC Stock]

  • 1 pcs$0.01892
  • 10,000 pcs$0.01802

Nimewo Pati:
BZT52B8V2-G3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ZENER 8.2V 410MW SOD123. Zener Diodes 8.2 Volt 0.5W 2%
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BZT52B8V2-G3-18 electronic components. BZT52B8V2-G3-18 can be shipped within 24 hours after order. If you have any demands for BZT52B8V2-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BZT52B8V2-G3-18 Atribi pwodwi yo

Nimewo Pati : BZT52B8V2-G3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ZENER 8.2V 410MW SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 8.2V
Tolerans : ±2%
Pouvwa - Max : 410mW
Enpedans (Max) (Zzt) : 4.5 Ohms
Kouran - Fèy Reverse @ Vr : 100nA @ 6V
Voltage - Forward (Vf) (Max) @ Si : -
Operating Tanperati : -55°C ~ 150°C
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123

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