Vishay Semiconductor Diodes Division - GSIB2520N-M3/45

KEY Part #: K6537998

GSIB2520N-M3/45 Pricing (USD) [56405PC Stock]

  • 1 pcs$0.69322
  • 1,200 pcs$0.66020

Nimewo Pati:
GSIB2520N-M3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1P 200V 25A GSIB-5S. Bridge Rectifiers 25A,200V,SINGLE INLINE BRIDGE
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GSIB2520N-M3/45 electronic components. GSIB2520N-M3/45 can be shipped within 24 hours after order. If you have any demands for GSIB2520N-M3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSIB2520N-M3/45 Atribi pwodwi yo

Nimewo Pati : GSIB2520N-M3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1P 200V 25A GSIB-5S
Seri : -
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 25A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 12.5A
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GSIB-5S
Pake Aparèy Founisè : GSIB-5S

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