Manifakti :
Rohm Semiconductor
Deskripsyon :
DIODE SCHOTTKY 650V 2A TO220-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
2A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 2A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
10.8µA @ 650V
Kapasite @ Vr, F :
110pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Operating Tanperati - Junction :
175°C (Max)