Microsemi Corporation - APT35GT120JU2

KEY Part #: K6533174

APT35GT120JU2 Pricing (USD) [4698PC Stock]

  • 1 pcs$9.22120
  • 100 pcs$9.15397

Nimewo Pati:
APT35GT120JU2
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 35A 260W SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - RF and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT35GT120JU2 Atribi pwodwi yo

Nimewo Pati : APT35GT120JU2
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 35A 260W SOT-227
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 55A
Pouvwa - Max : 260W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 2.53nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : ISOTOP
Pake Aparèy Founisè : SOT-227