Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 35V 200MA DO35
Voltage - DC Ranvèse (Vr) (Max) :
35V
Kouran - Mwayèn Rèktifye (Io) :
200mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 30mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
2ns
Kouran - Fèy Reverse @ Vr :
100nA @ 25V
Kapasite @ Vr, F :
4pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
-65°C ~ 150°C