[8447PC Stock]
- Nimewo Pati:
- IPC60N04S4L06ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Rèkteur - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPC60N04S4L06ATMA1 electronic components. IPC60N04S4L06ATMA1 can be shipped within 24 hours after order. If you have any demands for IPC60N04S4L06ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC60N04S4L06ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPC60N04S4L06ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 8TDSON
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.6 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 30µA
Chaje Gate (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
3600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
63W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8-23
Pake / Ka :
8-PowerVDFN
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