Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE ARRAY GP REV POLAR 3TOWER
Kalite dyòd :
Standard, Reverse Polarity
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
100A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 100A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
25µA @ 50V
Operating Tanperati - Junction :
-40°C ~ 175°C
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Three Tower