Vishay Semiconductor Diodes Division - NS8KTHE3_A/P

KEY Part #: K6442308

NS8KTHE3_A/P Pricing (USD) [3177PC Stock]

  • 1,000 pcs$0.26162

Nimewo Pati:
NS8KTHE3_A/P
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 800V 8A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division NS8KTHE3_A/P electronic components. NS8KTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8KTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8KTHE3_A/P Atribi pwodwi yo

Nimewo Pati : NS8KTHE3_A/P
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 800V 8A TO220AC
Seri : Automotive, AEC-Q101
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 8A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 800V
Kapasite @ Vr, F : 55pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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