ESH2DHE3_A/H Pricing (USD) [402987PC Stock]
- 1 pcs$0.09178
- 5,250 pcs$0.05751
- Nimewo Pati:
- ESH2DHE3_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,25ns SMB, UF Rect, SMD
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division ESH2DHE3_A/H electronic components. ESH2DHE3_A/H can be shipped within 24 hours after order. If you have any demands for ESH2DHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH2DHE3_A/H Atribi pwodwi yo
Nimewo Pati :
ESH2DHE3_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 2A DO214AA
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
930mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
2µA @ 200V
Kapasite @ Vr, F :
30pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 175°C
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