Global Power Technologies Group - GHIS080A120S-A1

KEY Part #: K6532572

GHIS080A120S-A1 Pricing (USD) [1721PC Stock]

  • 1 pcs$25.15719
  • 10 pcs$23.67648
  • 25 pcs$22.19670
  • 100 pcs$21.16086

Nimewo Pati:
GHIS080A120S-A1
Manifakti:
Global Power Technologies Group
Detaye deskripsyon:
IGBT BOOST CHP 1200V 160A SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Global Power Technologies Group GHIS080A120S-A1 electronic components. GHIS080A120S-A1 can be shipped within 24 hours after order. If you have any demands for GHIS080A120S-A1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GHIS080A120S-A1 Atribi pwodwi yo

Nimewo Pati : GHIS080A120S-A1
Manifakti : Global Power Technologies Group
Deskripsyon : IGBT BOOST CHP 1200V 160A SOT227
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 160A
Pouvwa - Max : 480W
Vce (sou) (Max) @ Vge, Ic : 2.6V @ 15V, 80A
Kouran - Cutoff Pèseptè (Max) : 2mA
Antre kapasite (Cies) @ Vce : 10.3nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227

Ou ka enterese tou
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.