Vishay Semiconductor Diodes Division - BYT53B-TAP

KEY Part #: K6439114

BYT53B-TAP Pricing (USD) [477149PC Stock]

  • 1 pcs$0.07791
  • 25,000 pcs$0.07752

Nimewo Pati:
BYT53B-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 100V 1.9A SOD57. Rectifiers 1.4 Amp 100 Volt 50 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYT53B-TAP electronic components. BYT53B-TAP can be shipped within 24 hours after order. If you have any demands for BYT53B-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYT53B-TAP Atribi pwodwi yo

Nimewo Pati : BYT53B-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 100V 1.9A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1.9A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C

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