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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDV302P-NB8V001

ON Semiconductor - FDV302P-NB8V001

KEY Part #: K6404393

[2027PC Stock]

    Nimewo Pati:
    FDV302P-NB8V001
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 25V 120MA SOT-23.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDV302P-NB8V001 electronic components. FDV302P-NB8V001 can be shipped within 24 hours after order. If you have any demands for FDV302P-NB8V001, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDV302P-NB8V001 Atribi pwodwi yo

    Nimewo Pati : FDV302P-NB8V001
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 25V 120MA SOT-23
    Seri : -
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 25V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 4.5V
    RD sou (Max) @ Id, Vgs : 10 Ohm @ 200mA, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 0.31nC @ 4.5V
    Vgs (Max) : -8V
    Antre kapasite (Ciss) (Max) @ Vds : 11pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 350mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23
    Pake / Ka : TO-236-3, SC-59, SOT-23-3

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