Microsemi Corporation - 1N5615US

KEY Part #: K6426632

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Nimewo Pati : 1N5615US

Manifakti : Microsemi Corporation

Deskripsyon : DIODE GEN PURP 200V 1A D5A

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 200V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 3A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 150ns

Kouran - Fèy Reverse @ Vr : 500nA @ 200V

Kapasite @ Vr, F : 45pF @ 12V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, A

Pake Aparèy Founisè : D-5A

Operating Tanperati - Junction : -65°C ~ 175°C

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