Toshiba Semiconductor and Storage - 2SA1930(Q,M)

KEY Part #: K6383527

2SA1930(Q,M) Pricing (USD) [9275PC Stock]

  • 500 pcs$0.19186

Nimewo Pati:
2SA1930(Q,M)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
TRANS PNP 180V 2A TO220NIS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 2SA1930(Q,M) electronic components. 2SA1930(Q,M) can be shipped within 24 hours after order. If you have any demands for 2SA1930(Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SA1930(Q,M) Atribi pwodwi yo

Nimewo Pati : 2SA1930(Q,M)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : TRANS PNP 180V 2A TO220NIS
Seri : -
Estati Pati : Obsolete
Kalite tranzistò : PNP
Kouran - Pèseptè (Ic) (Max) : 2A
Voltage - Pèseptè ki emèt deba (Max) : 180V
Vce saturation (Max) @ Ib, Ic : 1V @ 100mA, 1A
Kouran - Cutoff Pèseptè (Max) : 5µA (ICBO)
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 100 @ 100mA, 5V
Pouvwa - Max : 2W
Frekans - Tranzisyon : 200MHz
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3 Full Pack
Pake Aparèy Founisè : TO-220NIS

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