IPL65R650C6SATMA1 Pricing (USD) [131152PC Stock]
- 1 pcs$0.28202
- 5,000 pcs$0.25870
- Nimewo Pati:
- IPL65R650C6SATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 8TSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPL65R650C6SATMA1 electronic components. IPL65R650C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R650C6SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R650C6SATMA1 Atribi pwodwi yo
Nimewo Pati :
IPL65R650C6SATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 8TSON
Seri :
CoolMOS™ C6
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
440pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
56.8W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Thin-PAK (5x6)
Pake / Ka :
8-PowerTDFN
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