Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 1A DO41
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
300ns
Kouran - Fèy Reverse @ Vr :
5µA @ 600V
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AL, DO-41, Axial
Pake Aparèy Founisè :
DO-41
Operating Tanperati - Junction :
-65°C ~ 150°C