Nimewo Pati :
HGTP12N60A4D
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 54A 167W TO220AB
Estati Pati :
Not For New Designs
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
54A
Kouran - Pèseptè batman (Icm) :
96A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Oblije chanje enèji :
55µJ (on), 50µJ (off)
Td (on / off) @ 25 ° C :
17ns/96ns
Kondisyon egzamen an :
390V, 12A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
30ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3