Nimewo Pati :
GI751-E3/73
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 6A P600
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 6A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2.5µs
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
150pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
P600
Operating Tanperati - Junction :
-50°C ~ 150°C