Vishay Semiconductor Diodes Division - SS1FN6-M3/I

KEY Part #: K6429540

SS1FN6-M3/I Pricing (USD) [1640726PC Stock]

  • 1 pcs$0.02254

Nimewo Pati:
SS1FN6-M3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 60V 1A DO219AB. Schottky Diodes & Rectifiers 1A,60V,SMFSkty Rect
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - RF and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SS1FN6-M3/I electronic components. SS1FN6-M3/I can be shipped within 24 hours after order. If you have any demands for SS1FN6-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SS1FN6-M3/I Atribi pwodwi yo

Nimewo Pati : SS1FN6-M3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 60V 1A DO219AB
Seri : eSMP®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 60V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 530mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 800µA @ 60V
Kapasite @ Vr, F : 90pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 150°C

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