Vishay Semiconductor Diodes Division - SE10FDHM3/H

KEY Part #: K6440120

SE10FDHM3/H Pricing (USD) [1223781PC Stock]

  • 1 pcs$0.03189
  • 30,000 pcs$0.03173

Nimewo Pati:
SE10FDHM3/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1A DO219AB. Rectifiers 1A 200V ESD Prot SMF Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SE10FDHM3/H electronic components. SE10FDHM3/H can be shipped within 24 hours after order. If you have any demands for SE10FDHM3/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE10FDHM3/H Atribi pwodwi yo

Nimewo Pati : SE10FDHM3/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1A DO219AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 780ns
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : 7.5pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 175°C

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