Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 100V 40A DO5
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
40A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.19V @ 90A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
5µs
Kouran - Fèy Reverse @ Vr :
10µA @ 100V
Operating Tanperati - Junction :
-65°C ~ 200°C