BYW34-TR Pricing (USD) [477149PC Stock]
- 1 pcs$0.07791
- 25,000 pcs$0.07752
- Nimewo Pati:
- BYW34-TR
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 400V 2A SOD57. Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYW34-TR electronic components. BYW34-TR can be shipped within 24 hours after order. If you have any demands for BYW34-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYW34-TR Atribi pwodwi yo
Nimewo Pati :
BYW34-TR
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 400V 2A SOD57
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
5µA @ 400V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
SOD-57, Axial
Pake Aparèy Founisè :
SOD-57
Operating Tanperati - Junction :
-55°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
-
APT15DQ100KG
Microsemi Corporation
DIODE GEN PURP 1KV 15A TO220. Rectifiers FG, FRED, 1000V, TO-220, RoHS
-
APT15D120KG
Microsemi Corporation
DIODE GEN PURP 1.2KV 15A TO220. Rectifiers FG, FRED, 1200V, 15A, TO-220, RoHS
-
APT15D100KG
Microsemi Corporation
DIODE GEN PURP 1KV 15A TO220. Rectifiers FG, FRED, 1000V, 15A, TO-220, RoHS
-
1N4448 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA DO35. Diodes - General Purpose, Power, Switching GENERAL PURPOSE SMALL SIGNAL DIODE
-
BAS521,115
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SOD523. Diodes - General Purpose, Power, Switching Switching 300V 250mA
-
BAS521,135
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SOD523. Diodes - General Purpose, Power, Switching HI VOLTAGE SWITCHING DIODE 300V 625mA
Pati cho
- MBRB10H50HE3/45
- MBRB16H35-E3/81
- GP10KE-M3/73
- 1N4005-N-0-2-BP
- 1N4003 BK
- IRD3CH31DB6
- SS310HE-TP
- CLL914 BK
- JANTX1N6761UR-1
- GP10-4003E-M3/54
- EGP10F-M3/54
- VS-30WQ06FNTRLPBF
- UH1B-E3/61T
- MBRF7H60HE3/45
- RGP15DHE3/54
- RB420D-TP
- VS-90SQ045TR
- DGP20HE3/54
- 1N5622GP-E3/73
- U1GWJ49(TE12L,F)
- STTH3R04
- 2A02-T
- STTH10R04G
- FFPF04U150STU
- VS-20L15TPBF
- MBR2515L
- MBR845RL
- B280-13
- 60CPF10
- 40EPS08
- MA3X72100L
- MA2J11600L
- DL4001
- IDD15E60BUMA1
- 2A01-TP
- IDW30E60AFKSA1
- RGP02-14E-E3/73
- HS5M M6G
- GL41DHE3/97
- SE15PD-M3/85A